Interwell radiative recombination in the presence of Random potential fluctuations in GaAs/AlGaAs biased double quantum wells
Timofeev V.B., Larionov A.V., Ioselevich A.S., Zeman J., Martinez G., Hvam J., Soerensen K.
PACS: 71.23.-k, 78.60.-b, 78.66.-w
The interwell radiative recombination from biased double quantum wells (DQW) in pin GaAs/AlGaAs heterostructures is investigated at different temperatures and external electrical fields. The luminescence line of interwell recombination of spatially separated electron-hole pairs exhibits systematic narrowing with temperature increase from 4.5 to 30 K. A theoretical model is presented which explains the observed narrowing in terms of lateral thermally activated tunneling of spatially separated Å-ì pairs localized by random potential fluctuations in quantum wells.