Home
For authors
Submission status

Current
Archive (English)
Archive
   Volumes 61-80
   Volumes 41-60
   Volumes 21-40
   Volumes 1-20
   Volumes 81-88
      Volume 88
      Volume 87
      Volume 86
      Volume 85
      Volume 84
      Volume 83
      Volume 82
      Volume 81
Search
VOLUME 82 | ISSUE 5 | PAGE 312
Identifying the electronic properties of the Ge(111)-(2\times1) surface by low temperature scanning tunneling microscopy
P. I. Arseyev, N. S. Maslova*, V. I. Panov*, S. V. Savinov*, C. Van Haesendonck+

P.I. Lebedev Physical Institution RAS, 119991 Moscow, Russia
*Department of Physics, Moscow State University, 119992 Moscow, Russia
+Laboratory of Solid-State Physics and Magnetism, K.U.Leuven, B-3001 Leuven, Belgium

PACS: 68.35.Dv, 68.37.Ef, 73.20.At
Abstract
We present the results of our low temperature scanning tunneling microscopy (STM) investigation of the clean Ge(111) surface. Our experiments enable the first time STM observation of one-dimensional surface screening around surface defects. We identify the dominating role of surface states in the low temperature STM imaging as well as the important influence of non-equilibrium kinetics on the measured tunneling spectra.


Download PS file (GZipped, 526.3K)  |  Download PDF file (275K)

Список работ, цитирующих данную статью, см. здесь.

List of articles citing this article can be found here.