Home
For authors
Submission status

Current
Archive (English)
Archive
   Volumes 61-80
   Volumes 41-60
   Volumes 21-40
   Volumes 1-20
   Volumes 81-88
      Volume 88
      Volume 87
      Volume 86
      Volume 85
      Volume 84
      Volume 83
      Volume 82
      Volume 81
Search
VOLUME 82 | ISSUE 5 | PAGE 331
Effects of electron-phonon interaction in tunneling processes in nanostructures
P. I. Arseyev, N. S. Maslova^\dag,

P.N.Lebedev Physical Institute RAS, 119991 Moscow, Russia
^\dagDepartment of Physics, Moscow State University, 119992 Moscow, Russia

PACS: 73.40.Gk, 73.63.-b
Abstract
Tunneling through a system with two discrete electron levels coupled by electron-phonon interaction is considered. The interplay between elastic and inelastic tunneling channels is analyzed not only for weak electron-phonon coupling but also for strong coupling in resonant case. It is shown that intensity and width of peaks in tunneling conductivity is strongly influenced by non equilibrium effects.


Download PS file (GZipped, 102.9K)  |  Download PDF file (188.7K)

Список работ, цитирующих данную статью, см. здесь.

List of articles citing this article can be found here.