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| VOLUME 82 | ISSUE 6 |
PAGE 412
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| Quenched Disorder Effects in Electron Transport in Si Inversion Layers in the Dilute Regime |
V. M. Pudalov, M. E. Gershenson+, N. N. Klimov+*, H. Kojima+
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PACS: 71.27.+a, 71.30.+h, 72.20.Ee, 73.40.Qv
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Abstract
In order to reveal the effects of disorder in the vicinity of the
apparent metal-insulator transition in 2D, we studied the
electron transport in the same Si- device after cooling it down to
4 K at different fixed values of the gate voltage  .
Different did not modify significantly either the
momentum relaxation rate or the strength of electron-electron
interactions. However, the temperature dependences of the
resistance and the magnetoresistance in parallel magnetic fields,
in the vicinity of the 2D metal-insulator transition, carry
a strong imprint of the
quenched disorder determined by . This demonstrates
that the observed transition between metallic and insulating
regimes, besides universal effects of electron-electron
interaction, depends on a sample-specific localized
states (disorder).
We report an evidence
for a weak exchange in electrons between the reservoirs of
extended and resonant localized states which occur at low
densities. The strong cool-down dependent variations of ρ(T), we
believe, are evidence for developing spatially inhomogeneous state in the
critical regime.
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