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| VOLUME 84 | ISSUE 2 |
PAGE 99
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| Tunneling current induced phonon generation in nanostructures |
P. I. Arseyev, N. S. Maslova
P.N.Lebedev Physical Institute of RAS, 119991 Moscow, Russia
Department of Physics, Moscow State University, 119992 Moscow, Russia
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PACS: 73.40.Gk, 73.63.-b
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Abstract
We analyze generation of phonons in tunneling structures with two
electron states coupled by electron-phonon interaction. The conditions of
strong vibration excitations are determined and dependence of
non-equilibrium phonon occupation numbers on the applied bias is found. For
high vibration excitation levels self consistent theory for the tunneling
transport is presented.
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