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VOLUME 85 | ISSUE 3 | PAGE 208
Spin-dependent electron dynamics and recombination in GaAs1-xNx alloys at room temperature
V. K. Kalevich, A. Yu. Shiryaev, E. L. Ivchenko, A. Yu. Egorov, L. Lombez*, D. Lagarde*, X. Marie*, T. Amand*

A. F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia
*LNMO-INSA, 31077 Toulouse, France


PACS: 71.20.Nr, 72.25.-b, 78.47.+p, 78.55.Cr
Abstract
We report on both experimental and theoretical study of conduction-electron spin polarization dynamics achieved by pulsed optical pumping at room temperature in GaAs1-xNx alloys with a small nitrogen content (x = 2.1, 2.7, 3.4%). It is found that the photoluminescence circular polarization determined by the mean spin of free electrons reaches 40-45% and this giant value persists within 2 ns. Simultaneously, the total free-electron spin decays rapidly with the characteristic time \approx 150 ps. The results are explained by spin-dependent capture of free conduction electrons on deep paramagnetic centers resulting in dynamical polarization of bound electrons. We have developed a nonlinear theory of spin dynamics in the coupled system of spin-polarized free and localized carriers which describes the experimental dependencies, in particular, electron spin quantum beats observed in a transverse magnetic field.


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