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VOLUME 85 | ISSUE 6 | PAGE 334 Bias voltage dependent shift of the atomic-scale structure of the Ge(111)-(21) reconstructed surface measured by low temperature scanning tunneling microscopy P. I. Arseyev, N. S. Maslova*, V. I. Panov*, S. V. Savinov*, C. Van Haesendonck P.I. Lebedev Physical Institution RAS, 119991 Moscow, Russia *Department of Physics, Moscow State University, 119992 Moscow, Russia Laboratory of Solid-State Physics and Magnetism, Katholieke Universiteit Leuven, BE-3001 Leuven, Belgium PACS: 68.35.Dv, 68.37.Ef, 73.20.At Abstract We present the results of our low temperature scanning tunneling microscopy (STM) investigations of the clean Ge(111) surface. We observe bias dependent shifts of the atomic-scale structure caused by the reconstruction of the Ge(111) surface. A detailed comparison of experimental data with theoretical predictions based on the π-bonded chain model allows us to conclude that inelastic tip-sample interaction plays a significant role in STM imaging of the Ge(111)-() reconstructed surface. Download PS file (GZipped, 64.5K)  |  Download PDF file (156.8K) Список работ, цитирующих данную статью, см. здесь. List of articles citing this article can be found here.