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VOLUME 51 | ISSUE 3 | PAGE 174
Spin mechanism for hopping magnetoresistance in La2CuO4
A spin mechanism is proposed for a hopping magnetoresistance. The mechanism is based on a splitting of impurity states by spin in a molecular field and on a diiference between the probabilities for hops with and without spin flip. As a result, the resistance depends on the magnitude and relative orientation of the molecular fields near impurities. This orientation is in turn controlled by an external magnetic field.

Permission given by American Institute of Physics is appreciated.