Energy spectrum of narrow-gap semiconductor heterostructures described by a two-band equation

Kolesnikov A. V. , Silin A. P.

Two effects which arise in narrow-gap heterostructures described by a two-band equation are discussed. The first effect ensures that there are no coincident quantum-well energies in the hole and electron wells in type-II heterostructures which are symmetric under the substitution *E*_{c}(z)= -E_{v}(-z), where *E*_{c}(z) [E_{v}(z)] is the energy position of the bottom (top) of the conduction (valence) band. The second effect is the existence of a localized state whose energy coincides with the inversion point in a semiconductor structure with mutually inverted bands. This state does not depend on the shape of the energy structure or the boundary conditions. © *1995 American Institute of Physics.*