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VOLUME 36 | ISSUE 5 | PAGE 195
Negative magnetoresistance in semiconductors in the hopping conduction region
It is shown that negative magnetoresistance in the hopping conduction regime with variable hopping length can be explained by including the displacement of the metal-insulator transition point in an external magnetic field. This explanation can be verified by studying the dependence of the magnitude of the magnetoresistance on the angle between the field and the crystal axes in strongly anisotropic conductors such as deformed Ge and Si.




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