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VOLUME 85 | ISSUE 11 | PAGE 721
Possible manifestation of spin fluctuations in the temperature behavior of resistivity of Sm1.85Ce0.15CuO4 thin films
S. Sergeenkov+*, A. J. C. Lanfredi+, F. M. Araujo-Moreira+
+ Departamento de Física e Engenharia Física, Grupo de Materiais e Dispositivos,
Centro Multidisciplinar para o Desenvolvimento de Materiais Cerâmicos,
Universidade Federal de São Carlos, São Carlos, SP, 13565-905 Brazil
* Bogoliubov Laboratory of Theoretical Physics, Joint Institute for Nuclear Research,
141980 Dubna, Moscow reg., Russia


PACS: 74.25.Fy, 74.70.-b, 74.78.Bz
Abstract
A pronounced step-like (kink) behavior in the temperature dependence of resistivity ρ (T) is observed in the optimally-doped Sm1.85Ce0.15CuO4 thin films around Tsf=87 K and attributed to manifestation of strong spin fluctuations induced by Sm3+ moments with the energy \hbar\omega _{sf}=k_BT_{sf}\simeq 7 meV. In addition to fluctuation induced contribution ρ sf(T) due to thermal broadening effects (of the width ω sf), the experimental data are found to be well fitted accounting for residual (zero-temperature) ρ  res, electron-phonon ρ e-ph(T)=AT and electron-electron ρ e-e(T)=BT2 contributions. The best fits produced ω p=2.1 meV, τ 0-1=9.5•10-14 s-1, λ =1.2, and EF=0.2 eV for estimates of the plasmon frequency, the impurity scattering rate, electron-phonon coupling constant, and the Fermi energy, respectively.


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