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VOLUME 37 | ISSUE 2 | PAGE 119
Conductivity of inversion layers in InSb MIS structures below the "mobility threshold"
The temperature and field dependences of the conductivity of inversion layers in InSb MIS structures are studied. The experimental results are interpreted using the fluctuation theory of surface states and the conductivity of MIS structures [Zh. Eksp. Teor. Fiz. 84, 719 (1983)].




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