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VOLUME 87 | ISSUE 4 | PAGE 247
Structure and peculiarities of the \boldsymbol{(8\times n)}-type Si(001) surface prepared in a molecular beam epitaxy chamber: a scanning tunnelling microscopy study
L. V. Arapkina, V. M. Shevlyuga, V. A. Yuryev

A. M. Prokhorov General Physics Institute RAS, 119991 Moscow, Russia

PACS: 68.35.Bs, 68.37.Ef
Abstract
A clean Si(001) surface thermally purified in the ultra-high-vacuum molecular beam epitaxy chamber has been investigated by means of the scanning tunnelling microscopy. Morphological peculiarities of the Si(001) surface have been explored in detail. A classification of surface structure elements has been carried out, the dimensions of the elements have been measured, and relative heights of the surface relief have been determined. A reconstruction of the Si(001) surface prepared in the molecular beam epitaxy chamber has been found to be (8\times n). A model of the Si(001)-(8\times n) surface structure is proposed.


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