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| VOLUME 89 | ISSUE 2 |
PAGE 84
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| Quasi-direct optical transitions in Ge nanocrystals embedded in GeO2 matrix
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V. A. Volodin+*, E. B. Gorokhov+, D. V. Marin+*, H. Rinnert , P. Miska, M. Vergnat
+Institute of Semiconductor Physics Siberian branch RAS, 630090 Novosibirsk, Russia
*Novosibirsk State University, 630090 Novosibirsk, Russia
Laboratoire de Physique des Matériaux (LPM), Nancy-Université, CNRS, 54506 Vandœuvre lès Nancy, France
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PACS: 63.22.+m, 78.40.Fy, 81.05.Ys
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Abstract
GeO2 films with germanium nanocrystals (NCs) were deposited from
supersaturated GeO vapor with subsequent dissociation on Ge:GeO2. The
films were studied using photoluminescence (PL), Raman scattering,
IR-spectroscopy techniques. Ge NCs in initial film have sizes about 6-8 nm
and have no visible PL signal. The broad green-red PL peak was detected in
Ge:GeO2 films after thermal annealings. According to effective mass approach,
maximum of PL signal from such relatively big Ge NCs should be in IR region.
The experimentally observed PL signal is presumably originated due to
qusi-direct L1-L3' optical transitions «folded" in germanium NCs.
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