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| VOLUME 91 | ISSUE 3 |
PAGE 150
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| Spatial effects of Fano resonance in local tunneling conductivity in vicinity of impurity on semiconductor surface
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V. N. Mantsevich, N. S. Maslova1)
Moscow State University, Department of Physics, 119991 Moscow, Russia
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Abstract
We present the results of local tunneling conductivity
spatial distribution detailed theoretical investigations in
vicinity of impurity atom for a wide range of applied bias voltage.
We observed Fano resonance in tunneling conductivity resulting from
interference between resonant tunneling channel through impurity
energy level and direct tunneling channel between the tunneling
contact leads. We have found that interference between tunneling
channels strongly modifies form of tunneling conductivity measured
by the scanning tunneling microscopy/spectroscopy (STM/STS)
depending on the distance value from the impurity.
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