Home
For authors
Submission status

Archive
Archive (English)
Current
      Volume 106
      Volume 105
      Volume 104
      Volume 103
      Volume 102
      Volume 101
      Volume 100
      Volume 99
      Volume 98
      Volume 97
      Volume 96
      Volume 95
      Volume 94
      Volume 93
Search
VOLUME 96 | ISSUE 7 | PAGE 492
Bound states induced by a ferromagnetic delta-layer inserted into a three-dimensional topological insulator
V. N. Men'shov, V. V. Tugushev, E. V. Chulkov+

National Research Centre "Kurchatov Institute", 123182 Moscow, Russia
Tomsk State University, 634050 Tomsk, Russia
+Departamento de Fisica de Materiales, Facultad de Ciencias Quimicas, UPV/EHU and Centro de Fisica de Materiales CFM-MPC, Centro Mixto CSIC-UPV/EHU, Apdo. 1072, 20080 San Sebastián, Basque Country, Spain

Abstract
We report on theoretical study of the bound electron states induced by a ferromagnetic delta-layer embedded into a narrow-band-gap semiconductor of the Bi2Se3-type which is a three-dimensional topological insulator with large spin-orbit coupling. We make use of an effective Hamiltonian taking into account the inverted band structure of the semiconductor host at the Γ  point and describe the properties of the in-gap bound states: energy spectrum, characteristic length and spin polarization. We highlight a role of these states for a magnetic proximity effect in digital magnetic heterostructures based on the Bi2Se3-type semiconductors.




Список работ, цитирующих данную статью, см. здесь.

List of articles citing this article can be found here.