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VOLUME 96 | ISSUE 7 | PAGE 492
Bound states induced by a ferromagnetic delta-layer inserted into a three-dimensional topological insulator
V. N. Men'shov, V. V. Tugushev, E. V. Chulkov+

National Research Centre "Kurchatov Institute", 123182 Moscow, Russia
Tomsk State University, 634050 Tomsk, Russia
+Departamento de Fisica de Materiales, Facultad de Ciencias Quimicas, UPV/EHU and Centro de Fisica de Materiales CFM-MPC, Centro Mixto CSIC-UPV/EHU, Apdo. 1072, 20080 San Sebastián, Basque Country, Spain

We report on theoretical study of the bound electron states induced by a ferromagnetic delta-layer embedded into a narrow-band-gap semiconductor of the Bi2Se3-type which is a three-dimensional topological insulator with large spin-orbit coupling. We make use of an effective Hamiltonian taking into account the inverted band structure of the semiconductor host at the Γ  point and describe the properties of the in-gap bound states: energy spectrum, characteristic length and spin polarization. We highlight a role of these states for a magnetic proximity effect in digital magnetic heterostructures based on the Bi2Se3-type semiconductors.

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