|VOLUME 102 | ISSUE 5 |
Generation of THz radiation by AlGaAs nanowires
V. N. Trukhin+*, A. S. Buyskih+, A. D. Bouravlev+×°, I. A. Mustafin+*, Yu. B. Samsonenko×, A. V. Trukhin+°, G. E. Cirlin, M. A. Kaliteevski+×, D. A. Zeze∇, A. J. Gallant∇
+Ioffe Physicotechnical Institute of the RAS, 194021 St.-Petersburg, Russia
* St.-Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101 St.-Petersburg, Russia
×St.-Petersburg Academic University of the RAS, 194021 St.-Petersburg, Russia
°St.-Petersburg State University, 199034 St.-Petersburg, Russia
∇School Engineering and Computing Sciences, Durham University, South Road, DH1 3LE Durham, UK
St.-Peterburg Polytechnic University, 195251 St.-Peterburg, Russia
Terahertz (THz) emission by AlGaAs nanowires grown on a GaAs substrate under
excitation by femtosecond optical pulses has been observed. It is demonstrated
that THz emission occurs via excitation of photocurrent in the nanowires. The
dynamics of photoinduced charge carriers is studied via the influence of an
electron-hole plasma on THz radiation. It is shown that the capture of charge
carriers on vacancies which exist at the boundaries of nanowires, on the
interfaces between cubic and hexagonal phase in nanowires, leads to an
in the efficiency of THz emission.
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