Home
For authors
Submission status

Current
Archive (English)
Archive
   Volumes 81-92
   Volumes 41-60
   Volumes 21-40
   Volumes 1-20
   Volumes 61-80
      Volume 80
      Volume 79
      Volume 78
      Volume 77
      Volume 76
      Volume 75
      Volume 74
      Volume 73
      Volume 72
      Volume 71
      Volume 70
      Volume 69
      Volume 68
      Volume 67
      Volume 66
      Volume 65
      Volume 64
      Volume 63
      Volume 62
      Volume 61
Search
VOLUME 76 | ISSUE 9 | PAGE 660
Multicomponent dense electron gas as a model of Si MOSFET
S. V. Iordanski, A. Kashuba
L. D. Landau Institute for Theoretical Physics RAS, 119334 Moscow, Russia

PACS: 71.10.Ca, 73.43.Cd
Abstract
We solve a 2D model of N-component dense electron gas in the limit N→ ∞ and in a range of the Coulomb interaction parameter: N^{-3/2}\ll r_s\ll 1. The quasiparticle interaction on the Fermi circle vanishes as \hbar^2/Nm. The ground state energy and the effective mass are found as series in powers of rs2/3. In the quantum Hall state on the lowest Landau level at integer filling: 1\ll\nu<N, the charge activation energy gap and the exchange constant are: \Delta=\log(r_s
N^{3/2})\hbar\omega_H/\nu and J=0.66 \hbar\omega_H/\nu.


Download PS file (GZipped, 113.9K)  |  Download PDF file (193.5K)