Theory of the de Haas van Alphen effect in doped semiconductors
Dyugaev A.M., Vaguer I.D., Wyder P.
Field dependence of magnetisation in doped semiconductors, like InSb, In As, GaAs etc., under strong magnetic fields is studied. The standard theory of de Haas van Alphen effect, mostly applicable to metals, is modified to include the long range fluctuations of charged carriers. The experimental investigation of this effect can brighten up some open questions of semiconductor physics, e.g. problem of tails in the electronic density of states. It is shown that in such systems the mean magnetisation is sensitive to magnetic interactions.